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  5. MMZ09312BT1

The MMZ09312BT1 from NXP Semiconductors is a RF Amplifier with Frequency 400 MHz to 1 GHz, Power Gain 31.7 dB, Small Signal Gain 24.5 to 26 dB, Noise Figure 4 dB, Output Power 29.6 dBm. Tags: Surface Mount, Driver Amplifier, Power Amplifier. More details for MMZ09312BT1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMZ09312BT1
  • Manufacturer
    NXP Semiconductors
  • Description
    InGaP HBT Linear Amplifier, 400 -1000 MHz, 31.7 dB, 29.6 dBm

General Parameters

  • Type
    Driver Amplifier, Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Standards Supported
    CDMA, GSM, 4G/LTE
  • Frequency
    400 MHz to 1 GHz
  • Power Gain
    31.7 dB
  • Small Signal Gain
    24.5 to 26 dB
  • Noise Figure
    4 dB
  • Output Power
    29.6 dBm
  • Output Power
    0.91 W
  • P1dB
    29.6 dBm
  • P1dB
    0.91 W
  • Input Power
    30 dBm
  • Input Power
    1 W
  • Class
    Class AB
  • Impedance
    50 Ohms
  • Input Return Loss
    -14 to -12 dB
  • Output Return Loss
    -15 to -11 dB
  • Supply Voltage
    3.0 to 5.0 V
  • Current Consumption
    Supply current: 110 to 138 mA
  • Transistor Technology
    InGaP, HBT
  • Technology
    InGaP, HBT
  • Package Type
    Surface Mount
  • Package
    QFN 3 x 3
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

Technical Documents
View details on the manufacturer's website
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