The MMZ25332B4T1 from NXP Semiconductors is a RF Amplifier with Frequency 1427 to 2700 MHz, Power Gain 26.5 dB, Small Signal Gain 23.5 to 26 dB, P1dB 33 dBm, P1dB 1.99 W. Tags: Surface Mount, Driver Amplifier. More details for MMZ25332B4T1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMZ25332B4T1
  • Manufacturer
    NXP Semiconductors
  • Description
    33 dBm, Driver Amplifiers from 1427 to 2700 MHz

General Parameters

  • Type
    Driver Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Base Station, Mobile, Communication, Small Cell
  • Standards Supported
    4G/LTE, WCDMA
  • Industry Application
    Cellular, Wireless Infrastructure
  • Frequency
    1427 to 2700 MHz
  • Power Gain
    26.5 dB
  • Small Signal Gain
    23.5 to 26 dB
  • P1dB
    33 dBm
  • P1dB
    1.99 W
  • IP3
    48 dBm
  • Input Power
    30 dBm
  • Input Power
    1 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    Linear Amplifier
  • Input Return Loss
    -13 dB
  • Output Return Loss
    -18 dB
  • Supply Voltage
    5 V
  • Current Consumption
    368 to 415 mA
  • Transistor Technology
    InGaP HBT
  • Package Type
    Surface Mount
  • Package
    QFN Package
  • Dimensions
    4 x 4 x 0.85 mm
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Junction Temperature: 175 Degree C

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