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  5. MMZ25332BT1

The MMZ25332BT1 from NXP Semiconductors is a RF Amplifier with Frequency 1.5 to 2.8 GHz, Power Gain 26.5 dB, Small Signal Gain 25 to 27.6 dB, Noise Figure 5.8 dB, Output Power 32 to 33 dBm. Tags: Surface Mount, Power Amplifier. More details for MMZ25332BT1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMZ25332BT1
  • Manufacturer
    NXP Semiconductors
  • Description
    InGaP HBT Linear Amplifier, 1800 -2800 MHz, 26.5 dB, 33 dBm

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Standards Supported
    WCDMA, TD-SCDMA, 4G/LTE, WLAN
  • Industry Application
    Cellular
  • Frequency
    1.5 to 2.8 GHz
  • Power Gain
    26.5 dB
  • Small Signal Gain
    25 to 27.6 dB
  • Noise Figure
    5.8 dB
  • Output Power
    32 to 33 dBm
  • Output Power
    1.58 to 2 W
  • P1dB
    32 to 33 dBm
  • P1dB
    1.99 W
  • IP3
    33 dBm
  • IP3
    1.99 W
  • Input Power
    30 dBm
  • Input Power
    1 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    Linear Amplifier
  • Input Return Loss
    -26 to -16 dB
  • Output Return Loss
    -16 to -9 dB
  • Supply Voltage
    3.0 to 5.0 V
  • Current Consumption
    Supply current: 350 to 412 mA
  • Transistor Technology
    InGaP, HBT
  • Technology
    InGaP, HBT
  • Package Type
    Surface Mount
  • Package
    QFN 3 x 3
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

Technical Documents
View details on the manufacturer's website
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