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  5. MMZ25333B

The MMZ25333B from NXP Semiconductors is a RF Amplifier with Frequency 1.5 to 2.7 GHz, Power Gain 44.2 dB, Small Signal Gain 40.4 to 43 dB, Output Power 33 dBm, Output Power 2 W. Tags: Surface Mount, Power Amplifier. More details for MMZ25333B can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMZ25333B
  • Manufacturer
    NXP Semiconductors
  • Description
    InGaP HBT Linear Amplifier, 1800 -2700 MHz, 45 dB, 31.4 dBm

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Base Station
  • Industry Application
    Cellular
  • Frequency
    1.5 to 2.7 GHz
  • Power Gain
    44.2 dB
  • Small Signal Gain
    40.4 to 43 dB
  • Output Power
    33 dBm
  • Output Power
    2 W
  • P1dB
    33 dBm
  • P1dB
    1.99 W
  • IP3
    42.8 dBm
  • IP3
    19.05 W
  • Input Power
    10 dBm
  • Input Power
    0.01 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    Linear Amplifier
  • Input Return Loss
    -12.2 dB
  • Output Return Loss
    -7.1 dB
  • Supply Voltage
    5 V
  • Current Consumption
    Supply current: 66 to 960 mA
  • Transistor Technology
    InGaP, HBT
  • Technology
    InGaP, HBT
  • Package Type
    Surface Mount
  • Package
    QFN 4 x 4
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

Technical Documents
View details on the manufacturer's website
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