The MMZ27333B from NXP Semiconductors is a RF Amplifier with Frequency 1.5 to 2.7 GHz, Power Gain 36.1 dB, Small Signal Gain 34.8 to 35.8 dB, Output Power 32.2 dBm, Output Power 1.66 W. Tags: Surface Mount, Power Amplifier. More details for MMZ27333B can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    MMZ27333B
  • Manufacturer
    NXP Semiconductors
  • Description
    InGaP HBT Linear Amplifier, 1500 -2700 MHz, 35 dB, 33 dBm

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Base Station
  • Industry Application
    Cellular
  • Frequency
    1.5 to 2.7 GHz
  • Power Gain
    36.1 dB
  • Small Signal Gain
    34.8 to 35.8 dB
  • Output Power
    32.2 dBm
  • Output Power
    1.66 W
  • P1dB
    32.2 dBm
  • P1dB
    1.65 W
  • Input Power
    10 dBm
  • Input Power
    0.01 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    Linear Amplifier
  • Input Return Loss
    17 dB
  • Output Return Loss
    13.3 dB
  • Supply Voltage
    5 V
  • Current Consumption
    Supply current: 420 to 445 mA
  • Transistor Technology
    InGaP, HBT
  • Technology
    InGaP, HBT
  • Package Type
    Surface Mount
  • Package
    QFN 4 x 4
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents