The MMZ38333B from NXP Semiconductors is a RF Amplifier with Frequency 3.4 to 3.8 GHz, Power Gain 37.9 dB, Small Signal Gain 36.3 to 37.9 dB, Output Power 31.7 dBm, Output Power 1.48 W. Tags: Surface Mount, Power Amplifier. More details for MMZ38333B can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMZ38333B
  • Manufacturer
    NXP Semiconductors
  • Description
    InGaP HBT Linear Amplifier, 3400 -3800 MHz, 37 dB, 32 dBm.

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Base Station
  • Standards Supported
    4G/LTE
  • Frequency
    3.4 to 3.8 GHz
  • Power Gain
    37.9 dB
  • Small Signal Gain
    36.3 to 37.9 dB
  • Output Power
    31.7 dBm
  • Output Power
    1.48 W
  • P1dB
    31.7 dBm
  • P1dB
    1.47 W
  • Input Power
    30 dBm
  • Input Power
    1 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    Linear Amplifier
  • Input Return Loss
    18.1 dB
  • Output Return Loss
    13 dB
  • Supply Voltage
    5 V
  • Current Consumption
    Supply current: 349 to 404 mA
  • Transistor Technology
    InGaP, HBT
  • Technology
    InGaP, HBT
  • Package Type
    Surface Mount
  • Package
    QFN 4 x 4
  • Storage Temperature
    -65 to 150 Degree C

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