QPA1006D

RF Amplifier by Qorvo (889 more products)

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The QPA1006D from Qorvo is a wide-band GaN on SiC based power amplifier that operates from 10.7 to 12.7 GHz. It provides an output power of more than 35 watts (46 dBm) and a gain of over 17 dB. The amplifier requires a supply voltage of 20 V.

The RF ports of the QPA1006D have DC blocking capacitors and are matched to 50 ohms. The amplifier is available as a die that measures 6.09 x 4.24 x 0.10 mm. It supports a wide range of operating conditions and is suitable for Radar, SATCOM and Point to point communication applications.

Product Specifications

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Product Details

  • Part Number
    QPA1006D
  • Manufacturer
    Qorvo
  • Description
    35 W GaN on SiC Power Amplifier from 10.7 to 12.7 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Industry Application
    Radar, SATCOM
  • Frequency
    10.7 to12.7 GHz
  • Gain
    17 dB
  • Small Signal Gain
    21.5 dB
  • Output Power
    46.02 dBm
  • Output Power
    39.99 W
  • Saturated Power
    46.02 dBm
  • Saturated Power
    40 W
  • PAE
    39 %
  • Impedance
    50 Ohms
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    17 to 26 dB
  • Output Return Loss
    5 to 9 dB
  • Supply Voltage
    20 V
  • Current Consumption
    1200 mA
  • Operating Temperature
    -40 to 85 Degrees C
  • Storage Temperature
    -55 to 125 Degrees C
  • RoHS
    Yes

Technical Documents