QPA2511

RF Amplifier by Qorvo (889 more products)

Note : Your request will be directed to Qorvo.

QPA2511 Image

The QPA2511 from Qorvo is a 2-Stage Power Amplifier Module that operates from 1.2 to 1.4 GHz. It delivers an output of 100 W with a large signal gain of 32 dB and a drain efficiency of 69 %. This PAM is manufactured using GaN-on-SiC HEMT technology that ensures optimal performance and high reliability. It requires a DC supply of 50 V and has a DC-blocking capacitor at the input port. The amplifier is available in a surface-mount package that measures 25.00 x 12.50 x 3.49 mm and is matched to 50 Ohms with integrated bias circuits. It is ideal for use in both military and commercial pulsed radar systems.

Product Specifications

View similar products

Product Details

  • Part Number
    QPA2511
  • Manufacturer
    Qorvo
  • Description
    100 W GaN Power Amplifier Module from 1.2 to 1.4 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Industry Application
    Military, Radar
  • Frequency
    1.2 to 1.4 GHz
  • Power Gain
    32.8 dB
  • Small Signal Gain
    35.8 dB
  • Grade
    Commercial, Military
  • Saturated Power
    50 to 51.6 dBm
  • Saturated Power
    100 to 144.54 W
  • Input Power
    25 dBm
  • Input Power
    0.316 W
  • Power Dissipation
    90.72 W
  • PAE
    60 %
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Pulse Width
    100 us
  • Duty Cycle
    10%
  • Sub-Category
    GaN Amplifier
  • Return Loss
    10 dB
  • Supply Voltage
    50 V
  • Quiscent Current
    10 to 100 mA
  • Transistor Technology
    GaN on SiC
  • Technology
    GaN
  • Package Type
    Surface Mount
  • Dimensions
    25.0 x 12.5 x 3.488 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

Technical Documents