QPL1000

RF Amplifier by Qorvo (889 more products)

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The QPL1000 from Qorvo is a GaN Low Noise Amplifier that operates from 8 to 11 GHz. It delivers a small signal gain of 27 dB with a noise figure of 1.7 dB. The LNA is fabricated using Qorvo’s production 0.25 um, GaN (Gen II) process which enables it to withstand an input power of up to 5 W, while delivering a saturated power of 15 dBm with low IM3 levels of −24 dBc (at Pout= +6 dBm / tone). It requires a DC supply of 10 V and consumes 20 mA of current. This RoHS compliant amplifier is matched to 50 ohms and has integrated DC blocking caps on both I/O ports for easy handling and simple system integration. It is available in a plastic over-mold QFN package that measures 4.00 x 4.00 x 0.85 mm and is ideal for satellite communications, point-to-point communications, defense & aerospace communications, electronic warfare, and RADAR applications.

Product Specifications

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Product Details

  • Part Number
    QPL1000
  • Manufacturer
    Qorvo
  • Description
    GaN Low Noise Amplifier from 8 to 11 GHz

General Parameters

  • Type
    Low Noise Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Communication, Point-to-Point
  • Industry Application
    SATCOM
  • Frequency
    8 to 11 GHz
  • Small Signal Gain
    27 dB
  • Noise Figure
    1.7 dB
  • Output Power
    9 to 15 dBm
  • Output Power
    0.01 to 0.03 W
  • P1dB
    9 dBm
  • P1dB
    0.007 W
  • Grade
    Commercial, Space
  • Saturated Power
    15 dBm
  • Saturated Power
    0.0316 W
  • Input Power
    37 dBm
  • Input Power
    5 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    13 dB
  • Output Return Loss
    12 dB
  • Supply Voltage
    10 V
  • Current Consumption
    20 mA
  • Package Type
    Surface Mount
  • Package
    Plastic Over-mold Package
  • Dimensions
    4.0 x 4.0 x 0.85 mm
  • Operating Temperature
    -40 to 95 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes

Technical Documents