The RIM091K1-20 from RFHIC is a GaN Solid-State Power Amplifier that operates from 910 to 930 MHz. It provides a saturated output power of 1100 W with a gain of 50 dB and has a PAE of up to 63%. The amplifier requires a DC supply of 50 V and is capable of both CW and pulsed operations. It is designed using RFHIC’s GaN on SiC HEMT technology that provides high efficiency, reliability, and linearity. This RoHS-compliant amplifier is fully matched to 50-ohms and has integrated DC blocking capacitors on both RF ports to simplify system integration. It is available in a module that measures 280 x 170 x 51 mm with SMA and 7/16 DIN-Female connectors. The amplifier is ideal for RF Energy applications like microwave chemical vapor deposition (CVD) reactors, microwave heating, microwave drying, microwave ablation, microwave plasma generation, and microwave lighting applications.
