The RNP24550-21 from RFHIC is a GaN Solid-State Power Amplifier that operates from 2400 to 2500 MHz. It provides a saturated output power of 550 W with a gain of 43 dB and has a PAE of up to 55%. The amplifier requires a DC supply of 50 V and is capable of both CW and pulsed operations. It is designed using RFHIC’s GaN on SiC HEMT technology that provides high efficiency, reliability, and linearity. This RoHS-compliant amplifier is fully matched to 50-Ohms and has integrated DC blocking capacitors on both RF ports to simplify system integration. It is available in a module that measures 240 x 98 x 25 mm with SMA and 7/16 DIN-Female connectors. This amplifier is ideal for RF Energy applications like microwave chemical vapor deposition (CVD) reactors, microwave heating, microwave drying, microwave ablation, microwave plasma generation, and microwave lighting applications.
