RNP58200-C2

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The RNP58200-C2 from RFHIC is a Solid-State GaN Power Amplifier that operates from 5725 to 5875 MHz. The amplifier is designed using GaN-on-SiC transistors and offers excellent thermal stability. It provides up to 200 W of CW output power (53 dBm) with a gain of over 30 dB and has a PAE of more than 31%. The amplifier requires a DC voltage of 42 V. It is available in a module that measures 208 x 66 x 32 mm with N-type and SMA-female connectors and is ideal for ISM and wireless power transfer applications.

Product Specifications

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Product Details

  • Part Number
    RNP58200-C2
  • Manufacturer
    RFHIC
  • Description
    200 W Solid-State GaN Power Amplifier from 5725 to 5875 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Module with Connector
  • Industry Application
    Industrial, Medical
  • Frequency
    5.725 to 5.875 GHz
  • Power Gain
    30 dB
  • Grade
    Commercial
  • Input Power
    25 dBm
  • Input Power
    0.3162 W
  • PAE
    31%
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    GaN Amplifier, SSPA
  • Input Return Loss
    8 dB
  • Supply Voltage
    8 to 42 V
  • Current Consumption
    300 to 1600 mA
  • Transistor Technology
    GaN on SiC
  • Dimensions
    208 x 66 x 32 mm
  • Connectors
    SMA, N Type
  • DC Connectors
    D-Sub
  • Operating Temperature
    -40 to 45 Degree C
  • Storage Temperature
    -40 to 105 Degree C

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