RRP1516100-50

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The RRP1516100-50 from RFHIC is a GaN-on-SiC Power Amplifier Pallet that operates from 1559 to 1610 MHz. It delivers a CW output power of 100 W with a power gain of 50 dB and an efficiency of 45%. This power amplifier is fabricated using RFHIC’s gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility (HEMT) technology and has a VSWR of less than 2.0:1. It has spurious levels of better than 60 dBc and harmonic levels of 10 dBc.

The RRP1516100-50 requires a DC supply of 32 V and consumes 8 A of current. It is available in a module that measures 147 x 49.5 x 23 mm and has an SMA female connector at the input and an N-type female connector at the output port. This amplifier is ideal for radar, drone systems, and jamming system applications.

Product Specifications

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Product Details

  • Part Number
    RRP1516100-50
  • Manufacturer
    RFHIC
  • Description
    100 W GaN-on-SiC Power Amplifier Pallet from 1559 to 1610 MHz for Radar Applications

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Module with Connector
  • Application
    Unmanned Aerial Vehicles(UAV)
  • Industry Application
    Jamming, Radar
  • Frequency
    1559 to 1610 MHz
  • Power Gain
    50 dB
  • Gain Flatness
    ±0.5 dB
  • Output Power
    100 W
  • Output Power
    50 dBm
  • Input Power
    0 dBm
  • PAE
    45 %
  • Class
    AB
  • Impedance
    50 Ohms
  • VSWR
    2.0:1
  • Harmonics
    10 dBc
  • Spurious
    60 dBc
  • Supply Voltage
    32 V
  • Current Consumption
    8 A
  • Transistor Technology
    HEMT
  • Technology
    GaN-on-SiC
  • Dimensions
    147 x 49.5 x 23 mm
  • Input Connector
    SMA, SMA - Female
  • Output Connector
    N Type, N Type - Female
  • DC Connectors
    T2M-110-01-L-D-RA-WT, Male : Supply
  • Weight
    0.4 kg
  • Cooling Options
    External Heat-sink Required
  • Operating Temperature
    -20 to 75 Degree C
  • Storage Temperature
    -40 to 105 Degree C
  • RoHS
    Yes

Technical Documents