RTH19008S-30

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The RTH19008S-30 from RFHIC is a GaN Hybrid Power Amplifier that operates from 1930 to 1995 MHz. It provides an output power of 8 W with a gain of 31.5 dB and has a high efficiency of 45%. The amplifier is fully matched to 50 ohms with integrated DC blocking caps on both RF ports to simplify system integration. It is available on an aluminum nitride (AIN) board that provides excellent thermal dissipation. This compact hybrid surface mount (SMD) measures 32 x 20 x 5.6 mm and is ideal for 4G LTE systems, small cells, and metro cell base station applications.

Product Specifications

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Product Details

  • Part Number
    RTH19008S-30
  • Manufacturer
    RFHIC
  • Description
    8 W GaN Hybrid Power Amplifier from 1930 to 1995 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Base Station, Small Cell
  • Standards Supported
    4G/LTE, 4G/LTE
  • Industry Application
    Cellular, Wireless Infrastructure
  • Frequency
    1.930 to 1.995 GHz
  • Power Gain
    29.5 to 31.5 dB
  • Gain Flatness
    -2 to +2 dB
  • Output Power
    46.5 dBm
  • Output Power
    44.67 W
  • Grade
    Commercial, Space
  • Saturated Power
    46.5 dBm
  • Saturated Power
    44.66 W
  • PAE
    45%
  • Impedance
    50 Ohms
  • Pulsed/CW
    Pulsed
  • Pulse Width
    20 µS
  • Duty Cycle
    10 %
  • Sub-Category
    Doherty Amplifier, GaN Amplifier, Hybrid Amplifier
  • Input Return Loss
    -10 to -6 dB
  • Harmonics
    -35 to -33 dBc
  • Supply Voltage
    -4.5 to 31 V
  • Current Consumption
    50 to 640 mA
  • Technology
    GaN on SiC
  • Package Type
    Surface Mount
  • Package
    SP-2C
  • Dimensions
    32 x 20 x 5.6 mm
  • Weight
    7 g
  • Operating Temperature
    -30 to 100 Degree
  • Storage Temperature
    -40 to 100 Degree C
  • Tags
    High Power Amplifier
  • RoHS
    Yes

Technical Documents