RWP03060-10

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The RWP03060-10 from RFHIC is a GaN-on-SiC Power Amplifier that operates from 20 to 512 MHz. It has been developed for broadcasting and communication system applications. The amplifier delivers an output power of 80 W with a gain of 38 dB and a power-added efficiency (PAE) of 65.29%. This amplifier is fabricated using GaN-on-SiC technology and attached on an Aluminum sub carrier with full in/out matching for broadband operation. It also offers improved thermal handling based on patented technology and supports an external heatsink. This power amplifier requires a DC supply of 32 V and consumes less than 8 A of current. It is available in a module that measures 72 x 50.8 x 16.8 mm with SMA (female) connectors.

Product Specifications

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Product Details

  • Part Number
    RWP03060-10
  • Manufacturer
    RFHIC
  • Description
    80 W GaN-on-SiC Power Amplifier from 20 to 512 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Module with Connector
  • Application
    Jamming
  • Frequency
    20 to 512 MHz
  • Power Gain
    35 to 38 dB
  • Small Signal Gain
    38 dB
  • Gain Flatness
    ± 1 to 2 dB
  • Output Power
    46 to 49 dBm
  • Input Power
    11 dBm
  • Impedance
    50 Ohms
  • Input Return Loss
    7 to 10 dB
  • Supply Voltage
    31.5 to 32 V
  • Current Consumption
    1.5 to 2 A
  • Technology
    GaN on SiC HEMT
  • Dimensions
    Package: 72(L) x 50.8(W) x 16.8(H) mm, Housing: 98.8(L) x 75(W) x 25(H) mm
  • Connectors
    SMA - Female
  • Weight
    Package: 105 g, Housing: 355 g
  • Cooling Options
    External Heat-sink
  • Operating Temperature
    -10 to 80 Degree C
  • Storage Temperature
    -40 to 105 Degree C
  • RoHS
    Yes

Technical Documents