RWP1027200-53

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The RWP1027200-53 from RFHIC is a Power Amplifier that operates from 1000 to 2500 MHz. It delivers an output power of 53 dBm (200 W) with a power gain of 50 dB. This amplifier is based on Gallium Nitride on Silicon carbide (GaN-on-SiC) technology and uses a unique patented technology for improved thermal handling. It requires a DC supply of 36 V and consumes 24 A of current. This amplifier is available in a package that measures 223 x 131 x 30 mm with SMA-female and N-type (female) connectors. It is ideal for use in broadcasting, telecommunications, medical, aerospace and defense, military, electronic warfare, radar, SATCOM, communication, EMI/RFI, and jamming applications.

Product Specifications

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Product Details

  • Part Number
    RWP1027200-53
  • Manufacturer
    RFHIC
  • Description
    180 W GaN Power Amplifier from 1 to 2.5 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Module with Connector
  • Application
    Communication, EMI/RFI
  • Industry Application
    Aerospace & Defense, Electronic Warfare, Jamming, Military, Radar, SATCOM
  • Frequency
    1000 to 2500 MHz
  • Power Gain
    50 dB
  • Gain Flatness
    ±1.5 dB
  • Grade
    Commercial, Military, Space
  • Saturated Power
    53 dBm
  • Saturated Power
    200 W
  • Input Power
    3 dBm
  • PAE
    33 %
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    GaN Amplifier
  • Return Loss
    -5 dB
  • Supply Voltage
    36 V
  • Current Consumption
    14 A
  • Quiscent Current
    1.8 A
  • Technology
    GaN-on-SiC
  • Dimensions
    223 x 131 x 30 mm
  • Input Connector
    SMA - Female
  • Output Connector
    N Type - Female
  • DC Connectors
    C7W2 / D-SUB / Male type
  • Cooling Options
    External Heat-sink
  • Operating Temperature
    -10 to 60 Degree C
  • Storage Temperature
    -30 to 105 Degree C
  • RoHS
    Yes

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