RWP20050-10

RF Amplifier by RFHIC | Visit website (151 more products)

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The RWP20050-10 from RFHIC is a RF Amplifier with Frequency 1 to 3 GHz, Power Gain 35 to 37 dB, Gain Flatness ± 1 to 2 dB, Input Return Loss 7 to 10 dB, Supply Voltage 31.5 to 32 V. Tags: Power Amplifier. More details for RWP20050-10 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RWP20050-10
  • Manufacturer
    RFHIC
  • Description
    Wideband GaN Power Amplifier from 1 to 3 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Module with Connector
  • Industry Application
    Commercial, Aerospace & Defense
  • Frequency
    1 to 3 GHz
  • Power Gain
    35 to 37 dB
  • Gain Flatness
    ± 1 to 2 dB
  • Impedance
    50 Ohms
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    7 to 10 dB
  • Switching Time
    2 to 5 us
  • Supply Voltage
    31.5 to 32 V
  • Current Consumption
    5 to 6.5 A
  • Quiscent Current
    1.2 to 1.7 A
  • Transistor Technology
    HEMT
  • Technology
    GaN
  • Dimensions
    72 x 50.8 x 16.8 mm (Package), 98.8 x 75 x 25 mm (Housing)
  • Connectors
    SMA, SMA - Female
  • Weight
    105 g (Package), 355 g (Housing)
  • Cooling Options
    External Heat-sink
  • Operating Temperature
    -20 to 80 Degree C
  • Storage Temperature
    -40 to 105 Degree C

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