RWP20050-1H

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The RWP20050-1H from RFHIC is a GaN-on-SiC Power Amplifier that operates from 1000 to 3000 MHz. It delivers an output power of 50 W (~47 dBm) with more than 35 dB of gain and has an ON/OFF switching time of less than 5 μs. This amplifier requires a DC supply of 32 V and consumes 1.2 A of current. It is available in a module that measures 72.0 x 50.8 x 16.8 mm and has SMA-female input/output connectors. The amplifier is ideal for use in communication systems and for other general applications.

Product Specifications

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Product Details

  • Part Number
    RWP20050-1H
  • Manufacturer
    RFHIC
  • Description
    50 W GaN-on-SiC Power Amplifier from 1 to 3 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Module with Connector
  • Application
    Communication, General Purpose
  • Frequency
    1 to 3 GHz
  • Gain
    35 to 37 dB
  • Gain Flatness
    ±1 to ±2 dB
  • Output Power
    45 to 47 dBm
  • Output Power
    31.62 to 50.11 W
  • Grade
    Commercial
  • Input Power
    10 dBm
  • Impedance
    50 Ohms
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    7 to 10 dB
  • Supply Voltage
    31.5 to 32 V
  • Current Consumption
    5 to 6.5 A
  • Quiscent Current
    1.2 to 1.7 A
  • Transistor Technology
    GaN on SiC
  • Dimensions
    Package: 72 x 50.8 x 16.8 mm, Housing: 98.8 x 75 x 25 mm
  • Connectors
    SMA - Female
  • Weight
    Package: 105 g, Housing: 355 g
  • Cooling Options
    External Heat Sink
  • Operating Temperature
    -20 to 80 Degree C
  • Storage Temperature
    -40 to 105 Degree C

Technical Documents