The CHA6354-QQA from United Monolithic Semiconductors is a 3-Stage GaN Power Amplifier MMIC that operates from 27.5 to 30 GHz. It delivers a saturated output power of 4 W (~36 dBm) with a gain of 27 dB and a power-added efficiency (PAE) of 17%. This PA is manufactured on a robust GaN-on-SiC HEMT technology and offers high linearity with low power consumption. It has input and output ports that are internally matched to 50 ? and supports electrostatic discharge (ESD) protection for high reliability. This amplifier also includes an SPDT switch at the output to perform switching operations. It requires a DC supply of 25 V and consumes 120 mA of current. This RoHS-compliant amplifier is available as a bare die that measures 5 x 4 mm and it is ideal for SATCOM uplink and 5G communication applications.
