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CHA6357-QKB

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The CHA6357-QKB from United Monolithic Semiconductors is a RF Amplifier with Frequency 27 to 31 GHz, Gain 28 dB(Linear/Small Signal), Small Signal Gain 28 dB, Saturated Power 36 dBm, Saturated Power 4 W. Tags: Surface Mount, Power Amplifier. More details for CHA6357-QKB can be seen below.

Product Specifications

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Product Details

  • Part Number
    CHA6357-QKB
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    4 W GaN Power Amplifier from 27 to 31 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Standards Supported
    VSAT, 5G
  • Industry Application
    SATCOM, Cellular
  • Frequency
    27 to 31 GHz
  • Gain
    28 dB(Linear/Small Signal)
  • Small Signal Gain
    28 dB
  • Saturated Power
    36 dBm
  • Saturated Power
    4 W
  • Input Power
    14 dBm
  • PAE
    20 to 22%
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    -11 dB
  • Output Return Loss
    -12 dB
  • Supply Voltage
    25 V
  • Current Consumption
    800 mA
  • Quiscent Current
    70 mA
  • Transistor Technology
    HEMT
  • Technology
    GaN on SiC
  • Package Type
    Surface Mount
  • Package
    24 Lead QFN
  • Dimensions
    4 x 4 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • Tags
    GaN Series
  • RoHS
    Yes
  • Note
    Drain Current at Situration : 800 mA

Technical Documents
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