CHA7453-99F

Note : Your request will be directed to United Monolithic Semiconductors.

The CHA7453-99F from United Monolithic Semiconductors is a RF Amplifier with Frequency 37.5 to 41.5 GHz, Gain 24 to 28 dB(Linear), Saturated Power 39.5 dBm, Saturated Power 9 W, Input Power 22 dBm. Tags: Chip, Power Amplifier. More details for CHA7453-99F can be seen below.

Product Specifications

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Product Details

  • Part Number
    CHA7453-99F
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    9 W GaN Power Amplifier from 37.5 to 41.5 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Industry Application
    Space, Military
  • Frequency
    37.5 to 41.5 GHz
  • Gain
    24 to 28 dB(Linear)
  • Grade
    Space, Military
  • Saturated Power
    39.5 dBm
  • Saturated Power
    9 W
  • Input Power
    22 dBm
  • PAE
    22 to 23%
  • Pulsed/CW
    CW
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    -12 dB
  • Output Return Loss
    -8 dB
  • Supply Voltage
    18 to 25 V
  • Current Consumption
    100 to 450 mA
  • Quiscent Current
    290 mA
  • Transistor Technology
    HEMT
  • Technology
    GaN on SiC
  • Package Type
    Chip
  • Dimensions
    3.6 x 2.9 mm
  • Operating Temperature
    -40 to 95 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • Tags
    GaN Series
  • RoHS
    Yes
  • Note
    Drain Current at Situration : 2500 mA

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