CHA8262-99F

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CHA8262-99F Image

The CHA8262-99F from United Monolithic Semiconductors (UMS) is a Three-Stage MMIC Power Amplifier that operates from 27.5 to 31.5 GHz. It delivers a saturated output power of 12 W (~41 dBm) with a linear gain of 24 dB and has a Power Added Efficiency (PAE) of 25%. This amplifier is manufactured on a 0.15µm GaN-on-SiC HEMT process and exhibits high linearity performance. It requires a DC supply of 20 V and consumes 280 mA of current. This RoHS-compliant amplifier is available as a bare die that measures 4.40 x 3.50 x 0.07 mm and is ideal for 5G and SATCOM uplink applications.

Product Specifications

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Product Details

  • Part Number
    CHA8262-99F
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    12 W GaN Power Amplifier MMIC from 27.5 to 31.5 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Display Application
    SATCOM Uplink
  • Standards Supported
    5G
  • Industry Application
    SATCOM
  • Frequency
    27.5 to 31.5 GHz
  • Gain
    24 dB
  • Grade
    Commercial, Space
  • Saturated Power
    41 dBm
  • Saturated Power
    12.5 W
  • Input Power
    27 to 30 dBm
  • Input Power
    0.5 to 1 W
  • PAE
    25 %
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Input Return Loss
    -10 dB
  • Output Return Loss
    -8 dB
  • Supply Voltage
    20 V
  • Quiscent Current
    280 mA
  • Transistor Technology
    0.15µm GaN- on-SiC HEMT
  • Dimensions
    4.4 x 3.5 x 0.07 mm
  • Operating Temperature
    -40 to 105 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes

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