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CHA8352-99F

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CHA8352-99F Image

The CHA8352-99F from United Monolithic Semiconductor is a Power Amplifier that that operates from 10.7 to 12.75 GHz. It delivers an output power of 20 W with a linear gain of 25 dB and has a PAE of more than 42%. The amplifier is designed on a proprietary UMS 0.15µm gate length GaN HEMT process. It requires a DC supply of 20 V and consumes 0.5 A of current. The amplifier is available as a bare die that measures 5.30 x 3.50 x 0.07 mm and is suitable for use in SATCOM and space applications.

Product Specifications

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Product Details

  • Part Number
    CHA8352-99F
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    20 W GaN Power Amplifier from 10.7 to 12.75 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Standards Supported
    Ku Band
  • Industry Application
    SATCOM
  • Frequency
    10.7 to 12.75 GHz
  • Gain
    25 dB
  • Grade
    Commercial, Space
  • PAE
    42 %
  • Sub-Category
    GaN Amplifier
  • Return Loss
    17 dB
  • Supply Voltage
    20 V
  • Current Consumption
    0.5 A
  • Transistor Technology
    GaN HEMT
  • Package Type
    Surface Mount
  • Dimensions
    5.3 x 3.5 x 0.07 mm
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