CHA8352-99F

The CHA8352-99F from United Monolithic Semiconductor is a Power Amplifier that that operates from 10.7 to 12.75 GHz. It delivers an output power of 20 W with a linear gain of 25 dB and has a PAE of more than 42%. The amplifier is designed on a proprietary UMS 0.15µm gate length GaN HEMT process. It requires a DC supply of 20 V and consumes 0.5 A of current. The amplifier is available as a bare die that measures 5.30 x 3.50 x 0.07 mm and is suitable for use in SATCOM and space applications.