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CHA8362-99F

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The CHA8362-99F from United Monolithic Semiconductors is a RF Amplifier with Frequency 26.5 to 31 GHz, Gain 25 dB(Linear/Small Signal), Small Signal Gain 25 dB, Saturated Power 44 dBm, Saturated Power 25 W. Tags: Chip, Power Amplifier. More details for CHA8362-99F can be seen below.

Product Specifications

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Product Details

  • Part Number
    CHA8362-99F
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    25 W GaN Power Amplifier from 26.5 to 31 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Industry Application
    SATCOM
  • Frequency
    26.5 to 31 GHz
  • Gain
    25 dB(Linear/Small Signal)
  • Small Signal Gain
    25 dB
  • Saturated Power
    44 dBm
  • Saturated Power
    25 W
  • Input Power
    25 dBm
  • PAE
    30 to 36%
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    -9 dB
  • Output Return Loss
    -12 dB
  • Supply Voltage
    18 to 25 V
  • Current Consumption
    300 to 700 mA
  • Quiscent Current
    440 mA
  • Transistor Technology
    HEMT
  • Technology
    GaN on SiC
  • Package Type
    Chip
  • Dimensions
    3.6 x 3.6 mm
  • Operating Temperature
    -40 to 95 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • Tags
    GaN Series
  • RoHS
    Yes
  • Note
    Drain Current at Situration : 3500 mA

Technical Documents
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