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H9G4750M12P

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The H9G4750M12P from Watech Electronics is a RF Amplifier with Frequency 4.7 to 5 GHz, Gain 34 to 35.4 dB, Output Power 40.79 dBm, Output Power 12 W, Saturated Power 40.79 dBm. Tags: Surface Mount, Driver Amplifier. More details for H9G4750M12P can be seen below.

Product Specifications

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Product Details

  • Part Number
    H9G4750M12P
  • Manufacturer
    Watech Electronics
  • Description
    LDMOS MMIC Amplifier from 4.8 to 5 GHz

General Parameters

  • Type
    Driver Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Small Cell, DAS, Boosters/Repeaters, Mobile Infrastructure, Base Station
  • Standards Supported
    5G NR, WCDMA
  • Industry Application
    Cellular
  • Frequency
    4.7 to 5 GHz
  • Gain
    34 to 35.4 dB
  • Output Power
    40.79 dBm
  • Output Power
    12 W
  • Saturated Power
    40.79 dBm
  • Saturated Power
    12 W
  • PAE
    27.7 to 35.4%
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Sub-Category
    Doherty Amplifier
  • Input Return Loss
    11.4 to 17.8 dB
  • Supply Voltage
    28 V
  • Quiscent Current
    35 mA
  • Technology
    LDMOS
  • Package Type
    Surface Mount
  • Package
    20 Pin LGA
  • Dimensions
    7 x 7 mm
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes
  • Note
    ACPR @5MHz (dBc): -30.5 to -29.9 dBc, ACPR*@10MHz (dBc): -41.3 to -40.2 dBc

Technical Documents
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