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HTH1D36P450H

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Product Specifications

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Product Details

  • Part Number
    HTH1D36P450H
  • Manufacturer
    Watech Electronics
  • Description
    400 W GaN Amplifier from 3.4 to 3.6 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Base Station, DAS, Boosters/Repeaters, Mobile Infrastructure
  • Standards Supported
    5G NR, 4G/LTE
  • Industry Application
    Cellular, Wireless Infrastructure
  • Frequency
    3.4 to 3.6 GHz
  • Gain
    14.1 to 14.6 dB
  • Gain Flatness
    0.5 dB
  • Output Power
    47.4 to 56.02 dBm
  • Output Power
    55 to 400 W
  • P1dB
    50.6 dBm
  • P1dB
    114.8 W
  • Saturated Power
    56.02 dBm
  • Saturated Power
    400 W
  • PAE
    48.44 to 49.09%
  • Pulsed/CW
    CW/Pulsed
  • Pulse Width
    1 mS
  • Duty Cycle
    10%
  • Sub-Category
    GaN Amplifier, Push-Pull Amplifier, Doherty Amplifier
  • Supply Voltage
    48 V (Drain)
  • Quiscent Current
    240 mA
  • Transistor Technology
    GaN
  • Package Type
    Flanged, Surface Mount
  • Package
    ACC2110S-4L
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes
  • Note
    Current : 7.2 to 10 mA (Drain Leakge)

Technical Documents
View details on the manufacturer's website
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