The WPGM0811050M from WavePia is a GaN HEMT MMIC Power Amplifier that operates from 8 to 11 GHz. This X-Band power amplifier delivers over 50 W of saturated output power with 22.11 dB of gain and has a power-added efficiency of 32.42%. It has been fabricated on a 0.25 µm GaN-on-SiC process. GaN has superior properties compared to silicon or gallium arsenide, including higher thermal conductivity, higher saturated electron drift velocity, higher breakdown voltage, greater power density, and wider bandwidths.
This power amplifier requires a DC supply from 28 to 32 V and consumes less than 1 A of current. It is available in a bolt-down package with excellent thermal management and measures 20 x 10 x 30 mm. All ports are matched to 50 ohms allowing for simple system integration. The amplifier is ideal for both civil and defense-related radar applications along with satellite communications.
Note: This amplifier is also available as a bare die.
