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  6. BAP55LX

The BAP55LX from NXP Semiconductors is a RF PIN Diode with Frequency Up to 3 GHz, Insertion Loss 0.05 to 0.26 dB, Isolation 12 to 19 dB, Forward Voltage 0.95 to 1.1 V, Forward Current 100 mA. Tags: Surface Mount. More details for BAP55LX can be seen below.

Product Specifications

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Product Details

  • Part Number
    BAP55LX
  • Manufacturer
    NXP Semiconductors
  • Description
    Silicon PIN diode with 100 mA of forward current

General Parameters

  • Application
    Attenuator, Switch
  • Frequency
    Up to 3 GHz
  • Configuration
    Single Diode
  • Insertion Loss
    0.05 to 0.26 dB
  • Isolation
    12 to 19 dB
  • Forward Voltage
    0.95 to 1.1 V
  • Forward Current
    100 mA
  • Reverse Voltage
    50 V
  • Reverse Current
    0.01 to 0.1 uA
  • Power Dissipation
    135 mW
  • Thermal Resistance
    78 K/W
  • Forward Resistance
    0.5 to 4.5 Ohms
  • Series Inductance
    0.4 nH
  • Capacitance
    0.18 to 0.28 pF
  • Junction Temperature
    -65 to 150 Degree C
  • Charge Carrier Life Time
    0.225 to 0.27 us
  • No. of Diodes
    1
  • Package Type
    Surface Mount
  • Package
    SOD882D
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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