SBE812

RF Schottky Diode by onsemi (309 more products)

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The SBE812 from onsemi is a RF Schottky Diode with Peak Reverse Voltage 60 V, Forward Voltage 0.6 V, Current Surge Peak 10 A, Current 1 A, Capacitance 35 pF. More details for SBE812 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SBE812
  • Manufacturer
    onsemi
  • Description
    Schottky Barrier Diode, 60V, 1A, Low IR, Non-Monolithic Dual VEC8 Common Cathode

General Parameters

  • Configuration
    Dual
  • Peak Reverse Voltage
    60 V
  • Forward Voltage
    0.6 V
  • Current Surge Peak
    10 A
  • Current
    1 A
  • Capacitance
    35 pF
  • Recovery Time
    10 ns
  • Package
    SOT-28FL / VEC-8

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