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SDS120J040G2

RF Schottky Diode by Sanan IC (66 more products)
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The SDS120J040G2 from Sanan IC is a RF Schottky Diode with Peak Reverse Voltage 1200 V (Surge Peak), Forward continuous Current 20000 to 98000 mA, Forward Voltage 1.45 to 2.70 V, Current Surge Peak 180 A (Non-Repetitive), Current 2 to 300 uA (Reverse). Tags: Surface Mount, Schottky Barrier Diode (SBD). More details for SDS120J040G2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SDS120J040G2
  • Manufacturer
    Sanan IC
  • Description
    1200 V / 20 A, SiC Schottky Barrier Diode

General Parameters

  • type
    Schottky Barrier Diode (SBD)
  • Peak Reverse Voltage
    1200 V (Surge Peak)
  • Forward continuous Current
    20000 to 98000 mA
  • Forward Voltage
    1.45 to 2.70 V
  • Current Surge Peak
    180 A (Non-Repetitive)
  • Current
    2 to 300 uA (Reverse)
  • Power Dissipation
    176 W
  • Capacitance
    72 to 1453 pF
  • Application
    Switching Power Supply, Power Factor Correction, Motor Driver, Traction, Charging Pile
  • Package Type
    Surface Mount
  • Package
    TO-247-3L
  • Operating Temperature
    -55 to 175 Degree C
  • Storage Temperature
    -55 to 175 Degree C

Technical Documents
View details on the manufacturer's website
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