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HVV1011-300

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The HVV1011-300 from Advanced Semiconductor, Inc. is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 54.77 dBm, Power(W) 300 W, Duty_Cycle 0.05, Gain 18.5 dB. Tags: Flanged. More details for HVV1011-300 can be seen below.

Product Specifications

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Product Details

  • Part Number
    HVV1011-300
  • Manufacturer
    Advanced Semiconductor, Inc.
  • Description
    1.03 to 1.09 GHz, 300 W Transistor for Pulsed Avionics Applications

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    54.77 dBm
  • Power(W)
    300 W
  • Pulsed Width
    50 us
  • Duty_Cycle
    0.05
  • Gain
    18.5 dB
  • Power Gain (Gp)
    17.5 to 19 dB
  • Input Return Loss
    -15 to -10 dB
  • VSWR
    20.00:1
  • Supply Voltage
    50 V
  • Threshold Voltage
    0.7 to 1.7 V
  • Input Power
    7.5 W
  • Drain Gate Voltage
    0.7
  • Breakdown Voltage - Drain-Source
    95 to 102 V
  • Drain Current
    100 mA
  • Drain Bias Current
    1.7
  • Drain Leakage Current (Id)
    50 to 200 uA
  • Gate Leakage Current (Ig)
    1 to 5 uA
  • Junction Temperature (Tj)
    200 Degree C
  • Thermal Resistance
    0.2 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -40 to 150 Degree C
  • Note
    Rise Time : 35 to 50 nS, Fall Time : 15 to 50 nS, Pulse Droop : 0.3 to 0.5 dB, Gate QuiesCent Voltage : 1.1 to 1.45 V

Technical Documents
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