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HVV1011-500L

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The HVV1011-500L from Advanced Semiconductor, Inc. is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 56.99 dBm, Power(W) 500 W, Gain 16.5 dB, Power Gain (Gp) 16.5 dB. Tags: Flanged. More details for HVV1011-500L can be seen below.

Product Specifications

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Product Details

  • Part Number
    HVV1011-500L
  • Manufacturer
    Advanced Semiconductor, Inc.
  • Description
    1.03 to 1.09 GHz, 500 W Transistor for Pulsed Avionics Applications

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    56.99 dBm
  • Power(W)
    500 W
  • Pulsed Width
    32 us (On), 18 us(off), x 48
  • Gain
    16.5 dB
  • Power Gain (Gp)
    16.5 dB
  • Power Added Effeciency
    0.51
  • Input Return Loss
    12 dB
  • VSWR
    20.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    102 V
  • Drain Efficiency
    0.51
  • Drain Current
    40000 mA
  • Drain Leakage Current (Id)
    300 uA
  • Gate Leakage Current (Ig)
    2 uA
  • Junction Temperature (Tj)
    200 Degree C
  • Thermal Resistance
    0.18 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Pulse Droop : 0.2 dB

Technical Documents
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