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HVV1011-600

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The HVV1011-600 from Advanced Semiconductor is an enhancement mode RF MOSFET power transistor for pulse applications in the L-Band from 1030 to 1090 MHz. The high voltage vertical technology produces over 600 W of pulsed output power with high gain, high efficiency and ease of matching with a 50V supply. It is specified to withstand a 20:1 VSWR at all phase angles under full rated output power. The device is available in a flanged package and is ideal for IFF, TCAS and Mode-S applications.

Product Specifications

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Product Details

  • Part Number
    HVV1011-600
  • Manufacturer
    Advanced Semiconductor, Inc.
  • Description
    600W L-Band High Power Pulsed Transistor from 1030 to 1090 MHz

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    57.78 to 58.45 dBm
  • Power(W)
    600 to 715 W
  • Pulsed Width
    50 us
  • Duty_Cycle
    2 %
  • Gain
    18 dB
  • Power Gain (Gp)
    17 to 18 dB
  • Input Return Loss
    12 to 18 dB
  • Class
    AB
  • Supply Voltage
    50 V
  • Threshold Voltage
    0.7 to 1.7 V
  • Input Power
    12 to 27 W
  • Drain Gate Voltage
    0.7
  • Breakdown Voltage - Drain-Source
    95 to 102 V
  • Drain Current
    100 mA
  • Drain Bias Current
    1.7
  • Drain Leakage Current (Id)
    100 to 400 uA
  • Gate Leakage Current (Ig)
    2 to 10 uA
  • Junction Temperature (Tj)
    200 Degree C
  • Thermal Resistance
    0.075 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -40 to 150 Degree C
  • Note
    Rise Time : 35 to 50 nS, Fall Time : 15 to 50 nS, Pulse Droop : 0.6 to 0.45 dB, Gate QuiesCent Voltage : 1 to 1.7 V

Technical Documents
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