B10G4750N12DL

RF Transistor by Ampleon (325 more products)

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The B10G4750N12DL from Ampleon is a 3-Stage Integrated Doherty MMIC that operates from 4700 to 5000 MHz. It delivers a nominal output power of 12 W (at 3 dB gain compression) with a power gain of 30 dB and a drain efficiency of 32%. This MMIC is manufactured using Ampleon's state-of-the-art LDMOS technology and has independent control of the carrier and peaking bias. It integrates input splitter, output combiner, output matching, and ESD protection in a single package. The MMIC is available in an LGA package that measures 7.00 x 7.00 x 0.98 mm and is ideal as an RF power MMIC for multi-carrier and multi-standard GSM, WCDMA, LTE, and NR small cell base station applications.

Product Specifications

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Product Details

  • Part Number
    B10G4750N12DL
  • Manufacturer
    Ampleon
  • Description
    3-Stage LDMOS Integrated Doherty MMIC from 4.7 to 5 GHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    GSM, 4G / LTE, 3G / WCDMA, Cellular
  • CW/Pulse
    CW, Pulse
  • Frequency
    4.7 to 5 GHz
  • Power
    40.79 dBm
  • Power(W)
    12 W
  • Power Gain (Gp)
    27 to 31.5 dB
  • Input Return Loss
    8 to 13 dB
  • Supply Voltage
    28 V
  • Gate Leakage Current (Ig)
    140 nA
  • Junction Temperature (Tj)
    175 Degree C
  • Package Type
    Surface Mount
  • Package
    LGA
  • RoHS
    Yes
  • Grade
    Commercial
  • Operating Temperature
    -55 to 125 Degree C
  • Storage Temperature
    -55 to 125 Degree C

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