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The TGF2018 from TriQuint is a discrete 180-micron pHEMT transistor which operates from DC to 20 GHz. It is designed using Triquint & proven standard 0.25um power pHEMT production process. It provides a P1dB of 22 dBm, a gain of 14 dB, a 55% o
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
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