The BLF0910H9LS600 from Ampleon is a 600 Watt LDMOS power amplifier transistor for RF energy applications that operates from 900 to 930 MHz. This transistor has been developed on Ampleon&rsquos latest Gen9HV 50 V LDMOS process, a node that has been optimized to deliver greatly increased efficiency, power and gain. It provides a high gain of typically 19.8 dB with an efficiency of typically above 68 %. It has integrated ESD protection and internal input matching. The matching increases the transistor input impedance and simplifies the design of the PCB matching structures to facilitate a compact amplifier design.
Two BLF0910H9LS600 can be cascaded to provide a 1.2 KW RF power amplifier in the same space as a single SOT539 package.
