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FLM2023L-30F

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FLM2023L-30F Image

The FLM2023L-30F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.025 to 2.285 GHz, Power 44 to 45 dBm, Power(W) 25.12 to 31.62 W, P1dB 44 to 45 dBm, Power Gain (Gp) 12 to 13 dB. Tags: Flanged. More details for FLM2023L-30F can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLM2023L-30F
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 2.025 to 2.285 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    L-Band
  • Application
    L Band
  • Frequency
    2.025 to 2.285 GHz
  • Power
    44 to 45 dBm
  • Power(W)
    25.12 to 31.62 W
  • P1dB
    44 to 45 dBm
  • Power Gain (Gp)
    12 to 13 dB
  • Power Added Effeciency
    0.43
  • Transconductance
    4000 mS
  • Supply Voltage
    10 V
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    7000 to 16000 mA
  • IMD
    -44 dBc
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.2 to 1.4 Degree C/W
  • Package Type
    Flanged
  • Package
    IK
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Pinch-off Voltage : -3.5 to -1 V, Gain Flatness : 2 dB, Channel Temperature Rise : 100 Degree C, Forward Gate Current : 54 mA

Technical Documents
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