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BLF10M6LS200

RF Transistor by Ampleon (325 more products)
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The BLF10M6LS200 from Ampleon is a RF Transistor with Frequency 700 MHz to 1 GHz, Power 53.01 dBm, Power(W) 199.99 W, P1dB 53.01 dBm, Power Gain (Gp) 19 to 20 dB. Tags: Surface Mount. More details for BLF10M6LS200 can be seen below.

Product Specifications

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Product Details

  • Part Number
    BLF10M6LS200
  • Manufacturer
    Ampleon
  • Description
    53.01 dBm (200 W), LDMOS Transistor from 700 to 1000 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Broadcast, ISM, RF Energy, Wireless Infrastructure
  • Application
    Industrial, 3G / WCDMA, ISM Band
  • CW/Pulse
    CW
  • Frequency
    700 MHz to 1 GHz
  • Power
    53.01 dBm
  • Power(W)
    199.99 W
  • P1dB
    53.01 dBm
  • Power Gain (Gp)
    19 to 20 dB
  • Input Return Loss
    -6 to -4.5 dB
  • VSWR
    10.00:1
  • Class
    AB
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.4 to 2.4 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Gate-Source (Vgs)
    -0.5 to 13 V
  • Drain Current
    1400 mA
  • Package Type
    Surface Mount
  • Package
    SOT502B
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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