BLS9G3135LS-400

RF Transistor by Ampleon (323 more products)

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The BLS9G3135LS-400 from Ampleon is an LDMOS power transistor that operates from 3.1 GHz to 3.5 GHz. It provides an output power of 400 watts with a gain of 12 dB and PAE of 43%. The transistor requires a supply voltage of 32 V and is ideal for S-Band radar applications. It is internally matched and has high flexibility with respect to pulse output formats. The transistor is available in a flanged ceramic package.

Product Specifications

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Product Details

  • Part Number
    BLS9G3135LS-400
  • Manufacturer
    Ampleon
  • Description
    400 Watt LDMOS Power Transistor from 3.1 GHz to 3.5 GHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Radar, Wireless Infrastructure
  • Application Type
    S Band, Radar
  • Application
    Radar
  • CW/Pulse
    Pulse
  • Frequency
    3100 to 3500 MHz
  • Power
    56.28 dBm
  • Power(W)
    425 W
  • Gain
    12 dB
  • Supply Voltage
    32 V
  • Breakdown Voltage
    65 V
  • Voltage - Drain-Source (Vdss)
    65 V
  • Voltage - Gate-Source (Vgs)
    -6 to 11
  • Drain Efficiency
    0.43
  • Junction Temperature (Tj)
    225 Degrees C
  • Package Type
    Chip
  • Storage Temperature
    -65 to 150 Degrees C

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