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BLF25M612G

RF Transistor by Ampleon (326 more products)
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The BLF25M612G from Ampleon is a RF Transistor with Frequency 2.4 to 2.5 GHz, Power 40.79 dBm, Power(W) 11.99 W, Power Gain (Gp) 17 to 19 dB, Input Return Loss -14 to -10 dB. Tags: Surface Mount. More details for BLF25M612G can be seen below.

Product Specifications

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Product Details

  • Part Number
    BLF25M612G
  • Manufacturer
    Ampleon
  • Description
    40.79 dBm (12 W), LDMOS Transistor from 2400 to 2500 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, RF Energy, Wireless Infrastructure
  • Application
    Industrial, ISM Band
  • CW/Pulse
    CW
  • Frequency
    2.4 to 2.5 GHz
  • Power
    40.79 dBm
  • Power(W)
    11.99 W
  • Power Gain (Gp)
    17 to 19 dB
  • Input Return Loss
    -14 to -10 dB
  • VSWR
    10.00:1
  • Class
    AB
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.4 to 2.4 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Gate-Source (Vgs)
    -0.5 to 13 V
  • Drain Current
    10 mA
  • Package Type
    Surface Mount
  • Package
    SOT975C
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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