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BLF8G27LS-100V

RF Transistor by Ampleon (325 more products)
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The BLF8G27LS-100V from Ampleon is a RF Transistor with Frequency 2.5 to 2.7 GHz, Power 50 dBm, Power(W) 100 W, P1dB 50 dBm, Power Gain (Gp) 15.8 to 17 dB. Tags: Surface Mount. More details for BLF8G27LS-100V can be seen below.

Product Specifications

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Product Details

  • Part Number
    BLF8G27LS-100V
  • Manufacturer
    Ampleon
  • Description
    50 dBm (100 W), LDMOS Transistor from 2500 to 2700 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Base Station, 3G / WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    2.5 to 2.7 GHz
  • Power
    50 dBm
  • Power(W)
    100 W
  • P1dB
    50 dBm
  • Power Gain (Gp)
    15.8 to 17 dB
  • Input Return Loss
    -10 dB
  • VSWR
    10.00:1
  • Class
    AB
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.5 to 2.3 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Gate-Source (Vgs)
    -0.5 to 13 V
  • Drain Current
    900 mA
  • Drain Bias Current
    29 A
  • Package Type
    Surface Mount
  • Package
    SOT1244B
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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