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BLP15M9S70G

RF Transistor by Ampleon (325 more products)
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The BLP15M9S70G from Ampleon is an LDMOS Power Transistor that operates from 10 to 1500 MHz. It provides a P1dB of 70 watts with a power gain of over 15.5 dB and drain efficiency of 70%. This RoHS-compliant transistor has integrated dual-sided ESD protection. It is available in a small plastic package and is ideal for broadcast transmitters, and ISM applications.

Product Specifications

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Product Details

  • Part Number
    BLP15M9S70G
  • Manufacturer
    Ampleon
  • Description
    70 W LDMOS Power Transistor from 10 to 1500 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, Broadcast, Wireless Infrastructure
  • Application
    Industrial, Scientific, Medical, ISM Band
  • CW/Pulse
    CW, Pulse
  • Frequency
    10 to 1500 MHz
  • Power
    48.45 dBm
  • Power(W)
    69.98 W
  • P1dB
    70 W
  • Pulsed Width
    100 uS
  • Power Gain (Gp)
    15.5 to 17.6 dB
  • Input Return Loss
    14 to 20 dB
  • Class
    AB
  • Supply Voltage
    32 V
  • Threshold Voltage
    2 to 2.5 V
  • Breakdown Voltage - Drain-Source
    65 to 70 V
  • Current
    300 mA
  • Drain Leakage Current (Id)
    2.8 uA
  • Gate Leakage Current (Ig)
    280 nA
  • Feedback Capacitance
    0.45 pF
  • Input Capacitance
    61 pF
  • Junction Temperature (Tj)
    225 Degree C
  • Output Capacitance
    22 pF
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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