The MHT1008N from NXP Semiconductors is an RF Power LDMOS Transistor that operates in the 2400 MHz ISM band. It delivers an output power of 12.5 W with a gain of 18.6 dB and has a PAE of 56.3%. This transistor operates over a DC power supply of 28 V and draws up to 110 mA of current. It is characterized with series equivalent large-signal impedance parameters and common source S-parameters. This RoHS-compliant transistor is available in a surface-mount package with integrated ESD protection and is designed for consumer and commercial cooking applications.
