BLP2425M10S250P

RF Transistor by Ampleon (325 more products)

Note : Your request will be directed to Ampleon.

BLP2425M10S250P Image

The BLP2425M10S250P from Ampleon is an LDMOS Power Transistor that operates from 2400 to 2500 MHz. It provides a P1dB of 250 watts with a power gain of over 13 dB and a drain efficiency of 64%. The transistor requires a 32 V power supply and has been designed for use in RF power amplifiers that operate in the 2.4 GHz ISM Band. It is available in a low cost thermally enhanced plastic package with integrated ESD protection.

Product Specifications

View similar products

Product Details

  • Part Number
    BLP2425M10S250P
  • Manufacturer
    Ampleon
  • Description
    250 W LDMOS Power Transistor from 2400 to 2500 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    RF Energy, ISM, Wireless Infrastructure
  • Application
    Amplifiers, ISM Band
  • CW/Pulse
    CW
  • Frequency
    2.4 to 2.5 GHz
  • Power
    53.98 dBm
  • Power(W)
    250 W
  • Gain
    13 to 15 dB
  • Power Gain (Gp)
    13 to 15 dB
  • Transconductance
    10.1 S
  • Input Return Loss
    -15 dB
  • Class
    AB
  • Supply Voltage
    32 V
  • Breakdown Voltage
    65 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Drain-Source (Vdss)
    32 V
  • Voltage - Gate-Source (Vgs)
    -6 to 16 V
  • Drain Leakage Current (Id)
    2.8 ?A
  • Gate Leakage Current (Ig)
    280 nA
  • Test Signal
    5
  • Impedance Zl
    3.3 - 5.4j to 4.1 - 5.7j
  • Impedance Zs
    5.4 - 1.0j to 12.1 - 1.9j
  • Junction Temperature (Tj)
    225 degree C
  • Package Type
    Flanged
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents