BLP5LA55SG

RF Transistor by Ampleon (325 more products)

Note : Your request will be directed to Ampleon.

BLP5LA55SG Image

The BLP5LA55SG from Ampleon is a Power Transistor that operates from 5 to 512 MHz. It delivers an output power of 55 W with a power gain of 19.6 dB and has a drain efficiency of 75%. This LDMOS power transistor has integrated dual-sided ESD protection for excellent off-state isolation and offers excellent ruggedness and reliability. It requires a DC supply of 13.6 V. This transistor is available in a plastic surface-mount package and is suitable for use in TETRA, SSB, and LTE mobile radio applications in VHF and UHF bands and for land mobile radio (LMR) applications.

Product Specifications

View similar products

Product Details

  • Part Number
    BLP5LA55SG
  • Manufacturer
    Ampleon
  • Description
    55 W LDMOS Power Transistor from 5 to 520 MHz for LMR Applications

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    4G / LTE, Cellular
  • Frequency
    1 to 520 MHz
  • P1dB
    55 W
  • Power Gain (Gp)
    18 to 19.6 dB
  • Input Return Loss
    15.3 dB
  • Supply Voltage
    12.5 to 14 V
  • Breakdown Voltage - Drain-Source
    30 V
  • Voltage - Drain-Source (Vdss)
    30 V
  • Voltage - Gate-Source (Vgs)
    -5 to 13 V
  • Gate Leakage Current (Ig)
    140 nA
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents