BLP5LA55SG

RF Transistor by Ampleon (323 more products)

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The BLP5LA55SG from Ampleon is a Power Transistor that operates from 5 to 512 MHz. It delivers an output power of 55 W with a power gain of 19.6 dB and has a drain efficiency of 75%. This LDMOS power transistor has integrated dual-sided ESD protection for excellent off-state isolation and offers excellent ruggedness and reliability. It requires a DC supply of 13.6 V. This transistor is available in a plastic surface-mount package and is suitable for use in TETRA, SSB, and LTE mobile radio applications in VHF and UHF bands and for land mobile radio (LMR) applications.

Product Specifications

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Product Details

  • Part Number
    BLP5LA55SG
  • Manufacturer
    Ampleon
  • Description
    55 W LDMOS Power Transistor from 5 to 520 MHz for LMR Applications

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    4G / LTE, Cellular
  • Frequency
    1 to 520 MHz
  • P1dB
    55 W
  • Power Gain (Gp)
    18 to 19.6 dB
  • Input Return Loss
    15.3 dB
  • Supply Voltage
    12.5 to 14 V
  • Breakdown Voltage - Drain-Source
    30 V
  • Voltage - Drain-Source (Vdss)
    30 V
  • Voltage - Gate-Source (Vgs)
    -5 to 13 V
  • Gate Leakage Current (Ig)
    140 nA
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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