BLP9H10S-850AVT

RF Transistor by Ampleon (323 more products)

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The BLP9H10S-850AVT from Ampleon is an Asymmetric LDMOS Doherty Power Transistor that operates from 617 to 960 MHz. It delivers an output power of 850 W (P3dB) with a power gain of 17.8 dB and has a drain efficiency of 51%. This FET has low thermal resistance providing excellent thermal stability and low output capacitance for improved performance in Doherty applications. It is designed for low memory effects providing excellent digital pre-distortion capability and has integrated ESD protection. The transistor requires a DC supply of 48 V. It is available in a surface-mount package that measures 19.46 x 36.31 x 3.92 mm and is ideal for use in the base station and multi-carrier applications.

Product Specifications

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Product Details

  • Part Number
    BLP9H10S-850AVT
  • Manufacturer
    Ampleon
  • Description
    850 W LDMOS Doherty Power Transistor from 617 to 960 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Base Station, Wireless Infrastructure
  • Application Type
    Base Station
  • Application
    Base Station
  • CW/Pulse
    CW, Pulse
  • Frequency
    617 to 960 MHz
  • Power
    59.29 dBm
  • Power(W)
    850 W
  • OIP3
    675 to 800 W
  • Power Gain (Gp)
    16.8 to 17.8 dB
  • Input Return Loss
    -14 to -9 dB
  • Supply Voltage
    48 V
  • Breakdown Voltage - Drain-Source
    108 V
  • Voltage - Drain-Source (Vdss)
    48 V
  • Voltage - Gate-Source (Vgs)
    -6 to 11 V
  • Drain Leakage Current (Id)
    2.8 uA
  • Gate Leakage Current (Ig)
    280 nA
  • Junction Temperature (Tj)
    225 Degree C
  • Thermal Resistance
    0.35 K/W
  • Package Type
    Flanged
  • Package
    Plastic Earless Flang 6 Leads
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    ACPR:-33 to -28 dBc

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