The A5G26H110N from NXP Semiconductors is an Asymmetrical Doherty Power GaN Transistor that operates from 2496 to 2690 MHz. It delivers an average output power of 15 W with a power gain of 17.7 dB and a drain efficiency of 51.7%. This transistor requires a DC supply of 48 V and consumes 46 mA of current. It is available in a DFN plastic package that measures 7.00 x 6.5 mm and is ideal for low-complexity linearization systems and massive MIMO active antenna systems for 5G/cellular base station applications.
