BLSC9G2731XS-200

RF Transistor by Ampleon (326 more products)

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BLSC9G2731XS-200 Image

The BLSC9G2731XS-200 from Ampleon is an LDMOS power transistor that operates from 2.7 to 3.1 GHz. It provides an output power of 200 watts with a gain of 14 dB and drain efficiency of 45%. The transistor requires a supply voltage of 32 V and is ideal for S-Band radar applications. It is internally matched and has high flexibility with respect to pulse output formats. The transistor is available in a flanged ceramic package.

Product Specifications

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Product Details

  • Part Number
    BLSC9G2731XS-200
  • Manufacturer
    Ampleon
  • Description
    200 W LDMOS Power Transistor for S-band Radar Applications

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Radar, Wireless Infrastructure
  • Application Type
    S Band, Radar
  • Application
    Radar
  • CW/Pulse
    Pulse
  • Frequency
    2700 to 3100 MHz
  • Power
    53 dBm
  • Power(W)
    200 W
  • Gain
    14 dB
  • Input Return Loss
    10 dB
  • Supply Voltage
    32 V
  • Threshold Voltage
    1.5 to 2.5 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Leakage Current
    2.8 uA
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degrees C

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