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The BLSC9G2731XS-200 from Ampleon is an LDMOS power transistor that operates from 2.7 to 3.1 GHz. It provides an output power of 200 watts with a gain of 14 dB and drain efficiency of 45%. The transistor requires a supply voltage of 32 V and is ideal for S-Band radar applications. It is internally matched and has high flexibility with respect to pulse output formats. The transistor is available in a flanged ceramic package.
16 W GaN-on-SiC Transistor from DC to 8 GHz
110 W GaN Doherty Power Transistor from 3400 to 3800 MHz
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
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