C4H10P600A

RF Transistor by Ampleon (325 more products)

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The C4H10P600A from Ampleon is a Doherty Power Transistor that operates from 0.7 to 1 GHz. It delivers an output power of 600 W with a power gain of 18.2 dB and has a drain efficiency of more than 56%. This GaN transistor has low output capacitance that allows it to deliver improved performance for Doherty applications. It is designed for broadband operation and has excellent digital pre-distortion capabilities. The power transistor is available in a pre-matched ceramic flange package and is ideal for base station applications.

Product Specifications

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Product Details

  • Part Number
    C4H10P600A
  • Manufacturer
    Ampleon
  • Description
    600 W GaN Doherty Power Transistor from 700 to 1000 MHz

General Parameters

  • Technology
    GaN
  • Application Industry
    Wireless Infrastructure
  • Application
    Base Station
  • CW/Pulse
    CW, Pulse
  • Frequency
    700 to 1000 MHz
  • Power Gain (Gp)
    17 to 18.2 dB
  • Input Return Loss
    8 to 16.5 dB
  • Supply Voltage
    48 to 52 V
  • Voltage - Drain-Source (Vdss)
    150 V
  • Current
    100 to 180 mA
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C

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