The C4H10P800A from Ampleon is a GaN Asymmetric Doherty Power Transistor that operates from 600 to 1000 MHz. It delivers an output power of 800 W with a power gain of 18.3 dB and a drain efficiency of 61.1%. This transistor has an adjacent channel power ratio (ACPR) of -22.9 dBc with exceptional pre-distortion capability. It has lower output capacitance for improved performance in Doherty applications and is internally matched to 50 Ohms for ease of use.
This RF transistor requires a drain-source voltage of 50 V and consumes 100 mA of current. It is available in a SMT plastic package and is ideal for base stations and multi-carrier applications.
